Rohstoff-Handelsplattform

SRAM Chip Sync Single 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray

The CY7C1620KV18 is a 1.8-V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock.
  • 144-Mbit density (8 M × 18, 8 M × 36)
  • 333 MHz clock for high bandwidth
  • 2-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
  • Two input clocks (K and K) for precise DDR timing
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Synchronous internally self-timed writes
  • DDR II operates with 1.5-cycle read latency when DOFF is asserted high

Spezifikationen

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 144 Mb
Operating temperature -40 to 85 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 22 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 790 mA
Product description 17 x 15 x 0.89 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 333 MHz
Data Rate DDR
Architecture Pipelined
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: CY7C1620KV18-333BZXI