SRAM Chip Sync Single 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray
The CY7C1620KV18 is a 1.8-V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock.
- 144-Mbit density (8 M × 18, 8 M × 36)
- 333 MHz clock for high bandwidth
- 2-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
- Two input clocks (K and K) for precise DDR timing
- Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Synchronous internally self-timed writes
- DDR II operates with 1.5-cycle read latency when DOFF is asserted high
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 4 MWords |
| Density | 144 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 165 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 22 Bit |
| Number Of | 36 Bit |
| Number Of | 36 Bit |
| Maximum O | 790 mA |
| Product description | 17 x 15 x 0.89 mm |
| Maximum R | 0.45 ns |
| Supplier | FBGA |
| Typical O | 1.8000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 1.7 V |
| Maximum O | 1.9 V |
| Maximum C | 333 MHz |
| Data Rate | DDR |
| Architecture | Pipelined |
| Lead Finish | Tin/Silver/Copper |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1620KV18-333BZXI