SRAM Chip Sync Quad 2.5V/3.3V 16M-Bit 512K x 32 6.5ns/3ns 100-Pin TQFP Tray
The GS8160E32BGT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Al though of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
- FT pin for user-configurable flow through or pipeline operation
- Dual Cycle Deselect (DCD) operation
- 1.8 V or 2.5 V core power supply
- 1.8 V or 2.5 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 100-lead TQFP package
- RoHS-compliant 100-lead TQFP package available
- 1MB product Family
- Green TQFP
Spezifikationen
| Brand | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 512 kWords |
| Density | 16 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 100 |
| Number Of Ports | 4 |
| Mounting | Surface Mount |
| Address B | 19 Bit |
| Number Of | 32 Bit |
| Number Of | 32 Bit |
| Maximum O | 215@Flow-Through|265@Pipelined mA |
| Product description | 20 x 14 x 1.4 mm |
| Maximum R | 6.5@Flow-Through|3@Pipelined ns |
| Supplier | TQFP |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Screening Level | Industrial |
| Minimum O | 2.3, 3 V |
| Maximum O | 2.7, 3.6 V |
| Maximum C | 153.8@Flow-Through|200@Pipelined MHz |
| Data Rate | SDR |
| Architecture | Flow-Through|Pipelined |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: GS8160E32BGT-200I