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SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 4ns 100-Pin TQFP Tray

The CY7C1352G is a 3.3V, 256K x 18 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1352G is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Write/Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock.
  • Pin compatible and functionally equivalent to ZBT™ devices
  • Internally self-timed output buffer control to eliminate the need to use OE
  • Byte Write capability
  • 256K x 18 common I/O architecture
  • 3.3V core power supply (VDD)
  • 2.5V/3.3V I/O power supply (VDDQ)
  • Fast clock-to-output times
    • 2.6 ns (for 250-MHz device)
  • Clock Enable (CEN) pin to suspend operation
  • Synchronous self-timed writes
  • Asynchronous output enable (OE)
  • Available in lead-free 100-Pin TQFP package
  • Burst Capability linear or interleaved burst order
  • ZZ” Sleep Mode Option and Stop Clock option

Spezifikationen

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 4 Mb
Operating temperature 0 to 70 °C
Pin Count 100
Number Of Ports 2
Mounting Surface Mount
Address B 18 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 225 mA
Product description 20 x 14 x 1.4 mm
Maximum R 4 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 133 MHz
Data Rate SDR
Architecture Pipelined
Lead Finish Matte Tin|Gold
Max Proce 260
Msl Level 3
SKU: CY7C1352G-133AXC