Rohstoff-Handelsplattform

SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 3.4ns 165-Pin FBGA Tray

The CY7C1382DV33 SRAM integrates 524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive edge triggered clock input (CLK).
  • Supports bus operation up to 200 MHz
  • Available speed grades is 200 MHz
  • Registered inputs and outputs for pipelined operation
  • 3.3 V core power supply
  • 2.5 V or 3.3 V I/O power supply
  • Fast clock-to-output times
  • Provides high performance 3-1-1-1 access rate
  • User selectable burst counter supporting Intel Pentium® interleaved or linear burst sequences
  • Separate processor and controller address strobes
  • Synchronous self-timed write

Spezifikationen

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 1 MWords
Density 18 Mbit
Operating temperature -40 to 85 °C
Pin Count 165
Number Of Ports 2
Mounting Surface Mount
Address B 20 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 275 mA
Product description 15 x 13 x 0.89 mm
Maximum R 3.4 ns
Supplier FBGA
Typical O 3.3000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 167 MHz
Data Rate SDR
Architecture Pipelined
Lead Finish Tin/Lead/Silver|Tin/Lead
Max Proce 235
Msl Level 3
SKU: CY7C1382DV33-167BZI