SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin SOJ

The ISSI IS61C6416AL is high-speed, 1,048,576-bit static RAMsorganized as 65,536 words by 16 bits. They are fabricatedusing ISSI"s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE1\ and CE2. The active LOW WriteEnable (WE\) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB)access. The IS61C6416AL is packaged in the JEDEC standard 44-pin400-mil SOJ and 44-pin TSOP (Type II).

• High-speed access time: 12 ns, 15ns
• Low Active Power: 175 mW (typical)
• Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL
• High-speed access time: 35 ns, 45ns
• Low Active Power: 50 mW (typical)
• Low Standby Power: 100 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh required
• Available in 44-pin SOJ package and 44-pin TSOP (Type II)
• Commercial, Industrial and Automotive temperature ranges available
• Lead-free available