SRAM Chip Async Single 3V 64M-Bit 4M x 16 70ns 48-Pin FBGA
The CY62187EV30 is a high performance CMOS static RAM organized as 4 M words by 16-bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.
- Very high speed
- 55 ns
- Wide voltage range
- 2.2 V to 3.7 V
- Ultra low standby power
- Typical standby current: 8 µA
- Maximum standby current: 48 µA
- Ultra low active power
- Typical active current: 7.5 mA at f = 1 MHz
- Easy memory expansion with CE/ and OE1/, CE/ and OE2/, and features
- Automatic power down when deselected
- CMOS for optimum speed and power
- Available in Pb-free 48-ball FBGA package
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 4 MWords |
| Density | 64 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 22 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 45 mA |
| Product description | 8 x 9.5 x 1.14(Max) |
| Maximum R | 70 ns |
| Supplier | FBGA |
| Typical O | 3.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 2.2 V |
| Maximum O | 3.7 V |
| Msl Level | 3 |
SKU: CY62187EV30LL-70BAXI