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SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 15ns 44-Pin TSOP-II

The CY7C1049BV33 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable, an active LOW Output Enable, and three-state drivers. Writing to the device is accomplished by taking Chip Enable and Write Enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. Reading from the device is accomplished by taking Chip Enable and Output Enable LOW while forcing Write Enable HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins are placed in a high-impedance state when the device is deselected, the outputs are disabled, or during a write operation. The CY7C1049BV33 is available in a standard 400-mil-wide 36-pin SOJ and 44-pin TSOPII packages with center power and ground (revolutionary) pinout.
  • High speed
    • tAA = 15 ns
  • Low active power
    • 504 mW (max.)
  • Low CMOS standby power (Commercial L version)
    • 1.8 mW (max.)
  • 2.0V Data Retention (660 µW at 2.0V retention)
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs
  • Easy memory expansion with CE/ and OE/ and features

Spezifikationen

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 512 kWords
Density 4 Mb
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 19 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 200 mA
Product description 18.52 x 10.26 x 1.04 mm
Maximum R 15 ns
Supplier TSOP-II
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 3 V
Maximum O 3.6 V
Lead Finish Tin/Lead
Max Proce 220
Msl Level 3
SKU: CY7C1049BV33-15ZI