SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 44-Pin TSOP-II
The CY7C1049CV33 is a high performance Complementary metal oxide semiconductor (CMOS) Static RAM organized as 524,288 words by eight bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight is then written into the location specified on the address pins.
- Temperature ranges
- Commercial: 0 °C to 70 °C
- High speed
- tAA = 8 ns
- Low active power
- 360 mW (max)
- 2.0 V data retention
- Automatic power down when deselected
- Transistor- transistor logic (TTL) compatible inputs and outputs
- Easy memory expansion with CE/ and OE/ and features
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 512 kWords |
| Density | 4 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 19 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 100 mA |
| Product description | 18.52 x 10.26 x 1.04 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 3 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Lead |
| Max Proce | 235 |
| Msl Level | 3 |
SKU: CY7C1049CV33-10ZI