SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin FBGA
The CY7C1041CV33 is a high performance CMOS static RAM organized as 262,144 words by 16 bits. To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable (BHE) is LOW, then data from IO pins is written into the location specified on the address pins.
- Temperature ranges
- Industrial: -40 °C to 85 °C
- Pin and function compatible with CY7C1041BV33
- High speed
- tAA = 8 ns
- Low active power
- 360 mW (max)
- 2.0 V data retention
- Automatic power down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE/ and OE/ and features
- Available in Pb-free 44-pin TSOP II package
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 100 mA |
| Product description | 8.5 x 7 x 0.89 mm |
| Maximum R | 10 ns |
| Supplier | FBGA |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 2.97 V |
| Maximum O | 3.63 V |
| Lead Finish | Tin/Silver/Copper |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1041CV33-10BAXI