SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 10ns 44-Pin TSOP-II T/R
The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. Writing to the device is accomplished by taking Chip Enable and Write Enable inputs LOW. If Byte Low Enable is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable (BHE) is LOW, then data from I/O pins is written into the location specified on the address pins.
- Pin and function compatible with CY7C1010CV33
- High speed
- tAA = 10 ns
- Low active power
- ICC = 90 mA at 10 ns
- Low CMOS standby power
- ISB2 = 10 mA
- 2.0 V data retention
- Automatic power down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE/ and OE/ and features
- Available in Pb-free 36-pin SOJ and 44-pin TSOP II packages
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 2 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 90 mA |
| Product description | 18.52 x 10.26 x 1.04 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 3 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1011DV33-10ZSXIT