SRAM Chip Async Dual 5V 8K-Bit 1K x 8 55ns 52-Pin PLCC
CY7C131 is high-speed, low-power CMOS 1 K / 2 K × 8 dual-port static RAMs. Two ports are provided permitting independent access to any location in memory. The CY7C131E / CY7C131AE / CY7C136E / CY7C136AE can be used as a standalone dual-port static RAM. It is the solution to applications requiring shared or buffered data, such as cache memory for DSP, bit-slice, or multiprocessor designs.
- True dual-ported memory cells, which allow simultaneous reads of the same memory location
- 1 K / 2 K × 8 organization
- 0.35 micron complementary metal oxide semiconductor (CMOS) for optimum speed and power
- High speed access: 15 ns
- Low operating power: ICC = 110 mA (typical), Standby: ISB3 = 0.05 mA (typical)
- Fully asynchronous operation
- Automatic power-down
- BUSY output flag to indicate access to the same location by both ports
- INT/ flag for port-to-port communication
- Available in 52-pin plastic leaded chip carrier (PLCC), 52-pin plastic quad flat package (PQFP)
- Pb-free packages available
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 kWords |
| Density | 8 Kb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 52 |
| Number Of Ports | 2 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 110 mA |
| Product description | 19.2 x 19.2 x 3.68 mm |
| Maximum R | 55 ns |
| Supplier | PLCC |
| Typical O | 5.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Tin/Lead |
| Max Proce | 220 |
| Msl Level | 3 |
SKU: CY7C131-55JI