MOSFET DRVR 4A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC T/R

The TPS28225 and TPS28226 are high-speed drivers for N-channel complimentary driven power MOSFETs with adaptive dead-time control. These drivers are optimized for use in variety of high-current one and multi-phase dc-to-dc converters. The TPS28225/6 is a solution that provides highly efficient, small size low EMI emmissions. The performance is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-O impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in half-bridge configuration. The TPS28225/6 features a 3-state PWM input compatible with all multi-phase controllers employing 3-state output feature. As long as the input stays within 3-state window for the 250-ns hold-off time, the driver switches both outputs low. This shutdown mode prevents a load from the reversed- output-voltage. The other features include under voltage lockout, thermal shutdown and two-way enable/power good signal. Systems without 3-state featured controllers can use enable/power good input/output to hold both outputs low during shutting down. The TPS28225/6 is offered in an economical SOIC-8 and thermally enhanced low-size Dual Flat No-Lead (DFN-8) packages. The driver is specified in the extended temperature range of –40°C to 125°C with the absolute maximum junction temperature 150°C. The TPS28226 operates in the same manner as the TPS28225/6 other than the input under voltage lock out. Unless otherwise stated all references to the TPS28225 apply to the TPS28226 also.

Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time

Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V

Wide Power System Train Input Voltage: 3 V Up to 27 V

Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude

Capable Drive MOSFETs with =40-A Current per Phase

High Frequency Operation: 14-ns Propagation Delay and
10-ns Rise/Fall Time Allow F_SW - 2 MHz

Capable Propagate <30-ns Input PWM Pulses

Low-Side Driver Sink On-Resistance (0.4 O)
Prevents dV/dT Related Shoot-Through Current

3-State PWM Input for Power Stage Shutdown

Space Saving Enable (input) and Power Good (output) Signals on Same Pin

Thermal Shutdown

UVLO Protection

Internal Bootstrap Diode

Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages

High Performance Replacement for Popular 3-State Input Drivers

APPLICATIONS

• Multi-Phase DC-to-DC Converters with Analog or Digital Control
• Desktop and Server VRMs and EVRDs
• Portable/Notebook Regulators
• Synchronous Rectification for Isolated Power Supplies