Trans GP BJT NPN 4V 0.03A 4-Pin(3+Tab) SOT-343 T/R

The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45 mA. With its high linearity at currents as low as 10 mA the device supports energy efficient designs. The typical transition frequency is approximately 5 GHz, hence the device offers high power gain at frequencies up to 11 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

• Very low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology
• OIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mA
• High transition frequency fT = 44 GHz @ 3 V, 25 mA
• NFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mA
• Maximum power gain Gms = 19.5 dB @ 5.5 GHz, 3 V, 15 mA
• Low power consumption, ideal for mobile applications, very common in WLAN Wi-Fi applications
• Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads
• Qualification report according to AEC-Q101 available