商品原材料交易平台

SRAMs (asynchronous)

The ISSI IS61WV51216BLL is a high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single power supply
    • VDD 2.4V to 3.6V
    • speed = 10ns for VDD 2.4V to 3.6V
    • speed = 8ns for VDD 3.3V + 5%
  • Packages available:
    • 48-ball miniBGA (9mm x 11mm)
    • 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support
  • Lead-free available
  • Data control for upper and lower bytes

规格参数

Brand ISSI
Datasheet PDF
Timing Type Asynchronous
Number Of Words 512 kWords
Density 8 Mbit
Operating temperature -40 to 85 °C
Number Of Ports 1
Mounting Surface Mount
Address B 19 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 50 mA
Maximum R 10 ns
Typical O 3.3000 V
ECCN 3A991
Schedule B 8542320040
HTSN 8542320041
Country of origin Taiwan
Packaging Tape and Reel
SKU: IS61WV51216EDBLL-10TLI-TR