SRAM Chip Sync Quad 2.5V/3.3V 36M-Bit 1M x 36 6.5ns/2.5ns 100-Pin TQFP Tray
The GS832036T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support
- FT pin for user-configurable flow through or pipeline operation
- Single Cycle Deselect (SCD) operation
- 2.5 V or 3.3 V +10%/–10% core power supply
- 2.5 V or 3.3 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 100-lead TQFP package
- RoHS-compliant 100-lead TQFP package available
规格参数
| Brand | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 1 MWords |
| Density | 36 Mbit |
| Operating temperature | 0 to 70 °C |
| Pin Count | 100 |
| Number Of Ports | 4 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 36 Bit |
| Number Of | 36 Bit |
| Maximum O | 210@Flow-Through|300@Pipelined mA |
| Product description | 20 x 14 x 1.4 mm |
| Maximum R | 6.5@Flow-Through|2.5@Pipelined ns |
| Supplier | TQFP |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Screening Level | Commercial |
| Minimum O | 2.3, 3 V |
| Maximum O | 2.7, 3.6 V |
| Maximum C | 153.8@Flow-Through|250@Pipelined MHz |
| Data Rate | SDR |
| Architecture | Flow-Through|Pipelined |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: GS832036GT-250