SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin TSOP-I
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM.They are low standby current and low operation current and ideal for the battery back-up application.The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.M5M51008DVP (normal lead bend type package).M5M51008DRV (reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.
- Power supply current
- Active (1MHz) max: 15mA (1MHz)
- stand-by (max): 20µA (Vcc=5.5V)
- Directly TTL compatible : All inputs and outputs
- Easy memory expansion and power down by S1,S2
- Data hold on +2V power supply
- Three-state outputs : OR - tie capability
- OE prevents data contention in the I/O bus
- Common data I/O
规格参数
| Brand | Renesas Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 1 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 70 mA |
| Product description | 8 x 11.8 x 1 mm |
| Maximum R | 70 ns |
| Supplier | TSOP-I |
| Typical O | 5.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320070 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Tin/Copper |
| Max Proce | 260 |
| Msl Level | 2 |
SKU: M5M51008DKV-70HIST