SRAM Chip Async Single 5V 1M-Bit 128K x 8 10ns 32-Pin SOJ
The CY7C1009D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and tri-state drivers.
- Pin- and function-compatible with CY7C109B/CY7C1009B
- High speed
- tAA = 10 ns
- Low active power
- ICC = 80 mA at 10 ns
- Low CMOS standby power
- ISB2 = 3 mA
- 2.0 V Data Retention
- Automatic power-down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE/ and OE1/, CE/ and OE2/ and options
- CY7C109D available in Pb-free 32-pin 400-Mil wide Molded SOJ and 32-pin TSOP I packages. CY7C1009D available in Pb-free 32-pin 300-Mil wide Molded SOJ package
规格参数
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 1 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 80 mA |
| Product description | 21.08 x 7.75 x 2.62 mm |
| Maximum R | 10 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | China |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1009D-10VXI