SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas"s high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array.
- Single 3.0 V supply: 2.7 V to 3.6 V
- Fast access time: 55/70 ns (max)
- Power dissipation:
- Standby: 3 µW (typ) (VCC = 3.0 V)
- Equal access and cycle times
- Common data input and output.
- Three state output
- Battery backup operation.
- 2 chip selection for battery backup
- Temperature Range: -40 to +85°C
规格参数
| Brand | Renesas Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 20 mA |
| Product description | 8.5 x 7.5 x 0.8 mm |
| Maximum R | 70 ns |
| Supplier | TFBGA |
| Typical O | 3.0000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Silver/Copper |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: R1LV0416DBG-7LI#B0