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SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA

The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas"s high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array.
  • Single 3.0 V supply: 2.7 V to 3.6 V
  • Fast access time: 55/70 ns (max)
  • Power dissipation:
    • Standby: 3 µW (typ) (VCC = 3.0 V)
  • Equal access and cycle times
  • Common data input and output.
    • Three state output
  • Battery backup operation.
    • 2 chip selection for battery backup
  • Temperature Range: -40 to +85°C

规格参数

Brand Renesas Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 4 Mb
Operating temperature -40 to 85 °C
Pin Count 48
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 20 mA
Product description 8.5 x 7.5 x 0.8 mm
Maximum R 70 ns
Supplier TFBGA
Typical O 3.0000 V
ECCN 3A991
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Minimum O 2.7 V
Maximum O 3.6 V
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: R1LV0416DBG-7LI#B0