SRAM Chip Async Single 3.3V 8M-Bit 1M x 8 45ns 44-Pin TSOP-II
The IS62WV10248EBLL are high-speed, 8M-bit static RAMs organized as 1M by 8 bits. They are fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 45ns with low power consumption. When CS1\ is HIGH (deselected) or when CS2 is low (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE\) controls both writing and reading of the memory. The IS62WV10248EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).
- High-speed access time: 45ns, 55ns
- CMOS low power operation- 36 mW (typical) operating
- TTL compatible interface levels
- Single power supply:2.2V-3.6V Vdd
- Data control for upper and lower bytes
- Automotive temperature (-40°C to +125°C)
- Lead-free available
规格参数
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 MWords |
| Density | 8 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 15 mA |
| Product description | 18.41 x 10.16 x 1 |
| Maximum R | 45 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.2 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: IS62WV10248EBLL-45TLI