SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 10ns 44-Pin TSOP-II Tray
The CY7C1020DV33 is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.
- Pin- and function-compatible with CY7C1020CV33
- High speed
- tAA = 10 ns
- Low active power
- ICC = 60 mA @ 10 ns
- Low complementary metal oxide semiconductor (CMOS) standby power
- ISB2 = 3 mA
- 2.0 V data retention
- Automatic power-down when deselected
- CMOS for optimum speed/power
- Independent control of upper and lower bits
- Available in Pb-free 44-pin 400-Mil wide Molded SOJ and 44-pin thin small outline package (TSOP) II packages
规格参数
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 32 kWords |
| Density | 512 Kb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 15 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 60 mA |
| Product description | 18.52 x 10.26 x 1.04 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | China |
| Screening Level | Industrial |
| Minimum O | 3 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1020DV33-10ZSXI