SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 20ns 28-Pin TSOP-I
The ISSIIS62LV256AL is a veryhigh-speed,lowpower,32,768-wordby8-bit staticRAM.Itis fabricatedusingISSI"shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields access times as fast as 15 ns maximum. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation is reduced to150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an activeLOW Chip Enable (CE)\. The active LOW Write Enable(WE)\ controls both writing and reading of the memory.The IS62/65LV256AL is available in the JEDEC standard28-pin SOJ, 28-pin SOP, and the 28-pin TSOP (Type I)package.
- High-speed access time: 20, 45 ns
- Automatic power-down when chip is deselected
- CMOS low power operation
- 17 µW (typical) CMOS standby
- 50 mW (typical) operating
- TTL compatible interface levels
- Single 3.3V power supply
- Fully static operation: no clock or refresh required
- Three-state outputs
- Industrial and Automotive temperatures available
- Lead-free available
规格参数
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 32 kWords |
| Density | 256 Kb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 28 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 15 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 25 mA |
| Product description | 8.1 x 11.9 x 1 mm |
| Maximum R | 20 ns |
| Supplier | TSOP-I |
| Typical O | 3.3000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.97 V |
| Maximum O | 3.63 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: IS62LV256AL-20TLI