SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 55ns 44-Pin TSOP-II

The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected. The input/output pins are placed in a high-impedance state when: deselected, outputs are disabled,both Byte High Enable and Byte Low Enable are disabled, or during a write operation. Writing to the device is accomplished by taking Chip Enables and Write Enable input LOW. If Byte Low Enable is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable is LOW, then data from I/O pins is written into the location specified on the address pins. Reading from the device is accomplished by taking Chip Enables and Output Enable LOW while forcing the Write Enable HIGH. If Byte Low Enable is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table for a complete description of read and write modes.

• Temperature Ranges
  • Industrial: -40°C to 85°C
  • Automotive-A: -40°C to 85°C
  • Automotive-E: -40°C to 125°C
• Very high speed: 45 ns
• Wide voltage range: 2.20V-3.60V
• Pin-compatible with CY62157CV25, CY62157CV30, and CY62157CV33
• Ultra-low active power
  • Typical active current: 1.5 mA @ f = 1 MHz
  • Typical active current: 12 mA @ f = fmax
• Ultra-low standby power
• Easy memory expansion with CE/ and OE1/, CE/ and OE2/, and features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in Pb-free and non Pb-free 48-ball FBGA, 44-pin TSOPII, and Pb-free 48-pin TSOPI