Transistor BJT Array Dual NPN 200mA 6-Pin DFN1412 T/R
Transistor BJT Array Dual NPN 200mA 6-Pin DFN1412 T/R
Характеристики
| Бренд | Nexperia |
|---|---|
| Msl Level | 1 |
| Описание продукта | 1.2 x 1.4 x 0.43 mm |
| Lead Finish | Tin-Lead |
| Рабочая температура | -55 to 150 °C |
| Maximum B | 950@50mA@5mA mV |
| Type Prod | Dual NPN |
| Max Proce | 235 °C |
| Maximum C | 40 V |
| Maximum E | 6 V |
| Maximum P | 480 mW |
| Maximum C | 60 V |
| Supplier | DFN1412 |
| Minimum D | 100@10mA@1V |
| Maximum C | 300@50mA@5mA V |
| Maximum D | 200 mA |
| Schedule B | 8541210080 |
| HTSN | 8541210075 |
| Страна происхождения | Китай |
| Maximum T | 300 MHz |
SKU: PMBT3904RAZ