Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N)
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N)
- 6.5th generation
- The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip
- Enhancement mode
- High-speed switching
- IGBT : tf = 0.20 µs (typ.) (Ic = 40 A)
- FWD : trr = 0.60 µs (typ.) (If = 15 A)
- Low saturation voltage : Vce(sat) = 1.9 V (typ.) (Ic = 40 A)
- High junction temperature : Tj = 175°C (max)
Характеристики
| Бренд | Toshiba |
|---|---|
| Maximum C | 1200 V |
| Maximum G | ±25 V |
| Configuration | Single |
| Lead Finish | Tin-Lead |
| Описание продукта | 15.5 x 4.5 x 19 mm |
| Channel Type | N |
| Maximum C | 40 A |
| Supplier | TO-3P(N) |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
SKU: GT40QR21(STA1,E,D