Trans IGBT Chip N-CH 1.2KV 258A 4-Pin SOT-227
Trans IGBT Chip N-CH 1.2KV 258A 4-Pin SOT-227
- Trench IGBT technology with positive temperature coefficient
- Square RBSOA
- 10 µs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft reverse recovery
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance (= 5 nH typical)
- Industry standard outline
- Compliant to RoHS directive 2002/95/EC
Характеристики
| Бренд | Vishay |
|---|---|
| Maximum C | 1200 V |
| Maximum G | 20 V |
| Configuration | Single Dual Emitter |
| Описание продукта | 38.3 x 25.7 mm |
| Channel Type | N |
| Maximum C | 258 A |
| Supplier | SOT-227 |
| Schedule B | 8541500080 |
| HTSN | 8541500080 |
SKU: GT100DA120U