Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
10 µs of short-circuit withstand time VCE(sat)= 1.85 V (typ.) @ IC= 15 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Maximum C | 1200 V |
| Maximum G | ?20 V |
| Configuration | Single |
| Описание продукта | 15.75(Max) x 5.15(Max) x 20.15(Max) |
| Channel Type | N |
| Maximum C | 30 A |
| Supplier | TO-247 |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Рабочая температура | -55 to 175 °C |
SKU: STGW15M120DF3