Trans GP BJT NPN/PNP 30V 3A 8-Pin SOIC N T/R
Trans GP BJT NPN/PNP 30V 3A 8-Pin SOIC N T/R
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Msl Level | 1 |
| Описание продукта | 5 x 4 x 1.5 mm |
| Lead Finish | Matte Tin |
| Рабочая температура | -55 to 150 °C |
| Maximum B | 0.9@0.01A@1A V |
| Type Prod | NPN|PNP |
| Max Proce | 260 |
| Maximum C | 30 V |
| Maximum E | 6@NPN|7@PNP V |
| Maximum P | 2000 mW |
| Maximum C | 30 V |
| Supplier | SOIC N |
| Minimum D | 180@2A@2V|180@1A@2V |
| Maximum C | 0.115@0.2A@2A|0.17@0.2A@2A V |
| Maximum D | 3 A |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Philippines |
| Maximum C | 30 V |
SKU: NJX1675PDR2G