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SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA

The GS8672T20BE -II+ ECCRAMs are built in compliance with the -II+ SRAM pin out standard for Common I/O synchronous SRAMs. They are 75,497,472-bit (72Mb) SRAMs. The GS8672T20BE SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
  • 2.5 Clock Latency
  • On-Chip ECC with virtually zero SER
  • Simultaneous Read and Write ™ Interface
  • Common I/O bus
  • JEDEC-standard package
  • Double Data Rate interface
  • Byte Write capability
  • Burst of 2 Read and Write
  • On-Die Termination (ODT) on Data (DQ), Byte Write (BW), and Clock (K, K) outputs
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V HSTL Interface
  • Pipelined read operation with self-timed Late Write
  • Fully coherent read and write pipelines
  • ZQ pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • Pin-compatible with 36Mb and 144Mb devices
  • 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available

Характеристики

Бренд GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 72 Mbit
Рабочая температура -40 to 100 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 21 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 1380 mA
Описание продукта 17 x 15 x 1.04 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Страна происхождения Taiwan
Maximum C 550 MHz
Data Rate DDR
Architecture Pipelined
SKU: GS8672T20BE-550I