SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA

The CY7C1170V18 is 1.8V Synchronous Pipelined SRAMs equipped with DDR-II+ architecture. The DDR-II+ consists of an SRAM core with an advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K. Read data is driven on the rising edges of K and K. Each address location is associated with two 8-bit words (CY7C1166V18), or 9-bit words (CY7C1177V18), or 18-bit words (CY7C1168V18), or 36-bit words (CY7C1170V18) that burst sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. All synchronous inputs pass through input registers controlled by the Kinput clocks. All data outputs pass through output registers controlled by the K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

• 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
• 300 MHz to 400 MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces (data transferred at 800 MHz) at 400 MHz
• Read latency of 2.5 clock cycles
• Two input clocks for precise DDR timing
  • SRAM uses rising edges only
• Echo clocks simplify data capture in high-speed systems
• Data valid pin (QVLD) to indicate valid data on the output
• Synchronous internally self-timed writes
• Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD
• HSTL inputs and Variable drive HSTL output buffers
• Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
• Offered in both Pb-free and non Pb-free packages
• JTAG 1149.1-compatible test access port
• Delay Lock Loop (DLL) for accurate data placement