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SRAM Chip Sync Single 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray

The GS81302T20E are built in compliance with the -II+ SRAM pin out standard for Common I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. The GS81302T20E -II+ SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
  • 2.5 Clock Latency
  • Simultaneous Read and Write Sigma DDRTM Interface
  • JEDEC-standard pin out and package
  • Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • Burst of 2 Read and Write
  • On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
  • Fully coherent read and write pipelines
  • ZQ pin for programmable output drive strength
  • Data Valid Pin (QVLD) Support
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • 15 mm x 17 mm, 165 FPBGA
  • RoHS-compliant 165-bump BGA package available
  • 1MB product Family

Характеристики

Бренд GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 8 MWords
Density 144 Mbit
Рабочая температура 0 to 85 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Number Of 18 Bit
Описание продукта 17 x 15 x 1.04 mm
Typical O 1.8000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Страна происхождения Taiwan
Maximum C 350 MHz
Data Rate DDR
Architecture Pipelined
SKU: GS81302T20E-350