SRAM Chip Sync Quad 2.5V/3.3V 32M-Bit 1M x 32 6.5ns/3ns 165-Pin FBGA Tray
The GS832132GE is a 37,748,736-bit high performance synchronous SRA M with a 2- bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
- IEEE 1149.1 JTAG-compatible Boundary Scan
- 2.5 V or 3.3 V +10%/–10% core power supply
- 2.5 V or 3.3 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 165-bump FP-BGA package
- RoHS-compliant 165-bump BGA package available
- 32MB or 36MB product family
- Green 15 mm x 17 mm, 165 FPBGA
Характеристики
| Бренд | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 1 MWords |
| Density | 32 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 165 |
| Number Of Ports | 4 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 32 Bit |
| Number Of | 32 Bit |
| Maximum O | 200@Flow-Through|275@Pipelined mA |
| Описание продукта | 17 x 15 x 1.04 mm |
| Maximum R | 6.5@Flow-Through|3@Pipelined ns |
| Supplier | FBGA |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Screening Level | Industrial |
| Minimum O | 2.3, 3 V |
| Maximum O | 2.7, 3.6 V |
| Maximum C | 153.8@Flow-Through|200@Pipelined MHz |
| Data Rate | SDR |
| Architecture | Flow-Through|Pipelined |
| Lead Finish | Tin/Silver/Copper |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: GS832132GE-200I