SRAM Chip Sync Quad 2.5V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP T/R
The 9 Meg IS61NVP25636 feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, "no wait" state, device for networking and communications applications. They are organized as 256K words by 36 bits, fabricated advanced CMOS technology. Incorporating a "no wait" state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH ,the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected.
- 100 percent bus utilization
- No wait cycles between Read and Write
- Internal self-timed write cycle
- Individual Byte Write Control
- Single R/W (Read/Write) control pin
- Clock controlled, registered address, data and control
- Interleaved or linear burst sequence control using MODE input
- Three chip enables for simple depth expansion and address pipelining
- Power Down mode
- Common data inputs and data outputs
- CKE pin to enable clock and suspend operation
- JEDEC 100-pin TQFP package
- Power Supply: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)
- JTAG Boundary Scan for PBGA package
- Commercial and Industrial temperature available
- Lead-free available.
Характеристики
| Бренд | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 256 kWords |
| Density | 9 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 100 |
| Number Of Ports | 4 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 36 Bit |
| Number Of | 36 Bit |
| Maximum O | 280 mA |
| Описание продукта | 14 x 20 x 1.4 mm |
| Maximum R | 3.1 ns |
| Supplier | TQFP |
| Typical O | 2.5000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.375 V |
| Maximum O | 2.625 V |
| Maximum C | 200 MHz |
| Architecture | Pipelined |
| Lead Finish | Matte Tin |
| Max Proce | 260 °C |
| Msl Level | 3 |
SKU: IS61NVP25636A-200TQLI-TR