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SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray

GS8182S18BD is a built in compliance with the SigmaSIO DDR-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 18,874,368-bit (18Mb) SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
  • Simultaneous Read and Write SigmaSIO™ Interface
  • JEDEC-standard pinout and package
  • Dual Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • DLL circuitry for wide output data valid window and future frequency scaling
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
  • Fully coherent read and write pipelines
  • ZQ mode pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • Pin-compatible with present 9Mb, 36Mb, and 72Mb and future 144Mb devices
  • 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available

Характеристики

Бренд GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 1 MWords
Density 18 Mbit
Рабочая температура -40 to 85 °C
Pin Count 165
Number Of Ports 2
Mounting Surface Mount
Address B 19 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 690 mA
Описание продукта 15 x 13 x 0.94 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Страна происхождения Taiwan
Screening Level Industrial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 375 MHz
Data Rate DDR
Architecture Pipelined
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: GS8182S18BGD-375I