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SRAM Chip Sync Dual 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray

The GS81302R36E are built in compliance with the -II SRAM pin out standard for Common I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. The GS81302R36E -II SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
  • Simultaneous Read and Write ™ Interface
  • Common I/O bus
  • JEDEC-standard pin out and package
  • Double Data Rate interface
  • Byte Write (x36) and Nibble Write (x8) function
  • Burst of 4 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation with self-timed Late Write
  • Fully coherent read and write pipelines
  • ZQ pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb devices
  • 15 mm x 17 mm, 165 FPBGA
  • RoHS-compliant 165-bump BGA package available
  • 1MB product Family

Характеристики

Бренд GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 144 Mbit
Рабочая температура 0 to 85 °C
Pin Count 165
Number Of Ports 2
Mounting Surface Mount
Address B 22 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 780 mA
Описание продукта 17 x 15 x 1.04 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Страна происхождения Taiwan
Screening Level Commercial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 300 MHz
Data Rate DDR
Architecture Pipelined
Lead Finish Tin/Lead
SKU: GS81302R36E-300