SRAM Chip Async Single 5V 4M-Bit 256K x 16 45ns 44-Pin TSOP-II
The IS62C25616BL are high speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE\ is HIGH (deselected), the device assumes a stand by mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE/) controls both writing and reading of the memory. A data byte allows Upper Byte (UB/) and Lower Byte (LB\) access. The IS62C25616BL are packaged in the JEDEC standard 44-pin TSOP (Type II).
- High-speed access time: 45 ns
- Low Active Power: 50 mW (typical)
- Low Standby Power: 10 mW (typical) CMOS standby
- TTL compatible interface levels
- Single 5V ± 10% power supply
- Fully static operation: no Clock or refresh required
- Package: 44-pin TSOP (Type II)
- Commercial and Industrial temperature ranges available
- Lead-free available
Характеристики
| Бренд | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 20 mA |
| Описание продукта | 18.52 x 10.29 x 1.05 mm |
| Maximum R | 45 ns |
| Supplier | TSOP-II |
| Typical O | 5.0000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | Taiwan |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: IS62C25616BL-45TLI