SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44-Pin TSOP-II T/R
The M5M5W816 is a family of low voltage 8-Mbit static RAMs organized as 524288-words by 16-bit, fabricated by Mitsubishi"s high-performance 0.18µm CMOS technology.The M5M5W816 is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.
- Single 2.7~3.6V power supply
- Small stand-by current: 0.1µA (2V, typ.)
- No clocks, No refresh
- Data retention supply voltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1#, S2, BC1# and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18µm CMOS
- Package: 48ball 7.5mm x 8.5mm CSP
Характеристики
| Бренд | Renesas Electronics |
|---|---|
| Timing Type | Asynchronous |
| Number Of Words | 512 kWords |
| Density | 8 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 19 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 50 mA |
| Описание продукта | 18.41 x 10.16 x 1 mm |
| Maximum R | 55 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Copper |
| Max Proce | 260 |
| Msl Level | 2 |
SKU: M5M5W816TP55HI#ST