SRAM Chip Async Single 2.5V/3.3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II
The CY62158DV30 is a high-performance CMOS static RAMs organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption by 85% when deselected (1 HIGH or CE2 LOW).
- Very high speed: 45 ns, 55 ns and 70 ns
- Wide voltage range: 2.20V - 3.60V
- Ultra-low active power
- Typical active current:1.5 mA @ f = 1 MHz
- Typical active current: 12 mA @ f = fmax
- Ultra-low standby power
- Easy memory expansion with CE1/, CE2, and OE features
- Automatic power-down when deselected
- CMOS for optimum speed/power
- Packages offered in a 48-ball BGA, 48-pin TSOPI, and 44-pin TSOPII
Характеристики
| Бренд | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 MWords |
| Density | 8 Mb |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 15 mA |
| Описание продукта | 18.52 x 10.26 x 1.04 mm |
| Maximum R | 55 ns |
| Supplier | TSOP-II |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Screening Level | Industrial |
| Minimum O | 2.2 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY62158DV30LL-55ZSXI