SRAM Async Single 3V 16M-Bit 2M/1M x 8/16 55ns 48-Pin TSOP Tray

The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.

• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 45/55 ns (max)
• Power dissipation:
  • Active: 9 mW/MHz (typ)
  • Standby: 1.5 µW (typ)
• Completely static memory.
  • No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
  • Three state output
• Battery backup operation.
  • 2 chip selection for battery backup
• Temperature range: -40 to +85°C
• Byte function (×8 mode) available by BYTE# & A-1.