Flash Mem Serial 2.5V 4Mbit 64Kbyte x 64 8-Pin SOP-K

The LE25FU406B is a serial interface-compatible flash memory device with a 512K × 8-bit configuration. It uses a single 2.5V power supply for both reading and writing (program and erase functions) and does not require a special power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to the size of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can be efficiently utilized by selecting one of these functions depending on the application. A page program method is supported for data writing. The page program method of the LE25FU406B can program any amount of data from 1 to 256 bytes. The program time of 2.0ms (typ.) when programming 256 bytes (1 page) at one time makes for fast data writing. While making the most of the features inherent to a serial flash memory device, the LE25FU406B is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FU406B has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up to 30MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in applications such as portable information devices and small disk systems, which are required to have increasingly more compact dimensions. Read/write operations enabled by single 2.5V power supply: 2.30 to 3.60V supply voltage range Operating frequency : 30MHz 50MHz (at the planning stage) Temperature range : 0 to 70°C -40 to +85°C (at the planning stage) Serial interface : SPI mode 0, mode 3 supported Sector size : 4K bytes/small sector, 64K bytes/sector Small sector erase, sector erase, chip erase functions Page program function (256 bytes/page) Block protect function Highly reliable read/write Number of rewrite times : 100,000 times Small sector erase time : 40ms (typ.), 150ms (max.) Sector erase time : 80ms (typ.), 250ms (max.) Chip erase time : 200ms (typ.), 2.0s (max.) Page program time : 2.0ms/256 bytes (typ.), 2.5ms/256 bytes (max.) Status functions Ready/busy information, protect information Data retention period : 20 years Package : LE25FU406BTT MSOP8 (225mil) : LE25FU406BMA MFP8 (225mil) : LE25FU406BFN VSON8

Характеристики

Бренд ON Semiconductor
Maximum P 2.5/Page ms
Ecc Support Нет
Simultane Нет
Screening Level Commercial
Program Current 15 mA
Boot Block Нет
Erase Sus Нет
Interface Type Serial
Programmi 2.3, 3.6 V
Density 4 Mb
Maximum O 15 mA
Architecture Sectored
Typical O 2.5000 V
Описание продукта 4.9 x 3.9 x 1.5(Max)
Timing Type Synchronous
Рабочая температура 0 to 70 °C
Address B 24 Bit
Maximum E 2/Chip s
Schedule B 8542320050
HTSN 8542320051
Number Of Words 512 kWords
Number Of 8 Bit
Minimum O 2.3 V
Supplier SOP-K
Maximum O 3.6 V
Page Read 15 mA
SKU: LE25FU406BMBW00TLM-H