Diode Rectifier Bridge Single 800V 1A 4-Pin Micro DIP, MDB8S, ON Semiconductor

With the ever pressing need to improve power supply efficiencyand reliability, the MDBxS family is focused on offeringa best in class small form factor combined with best inclass efficient rectifier performance. The “S” family offers industry leading balance of efficiency,size, and cost. They offer designers improved efficiency byachieving an industry leading VF of 0.935 V Typ. at 1 A 25°C, and a VF of 1.165 V Typ. at 5 A 25 °C. These lower VFvalues offer roughly a 5% efficiency improvement overmeasured competitive same form factor devices. Thislower VF vs. competitive devices results in cooler and moreefficient power supply operation. The design supports a 30 A IFSM rating to absorb highsurge currents and offers rated breakdown voltages up to1000 V. Finally, the MDBxS family achieves all this in a small formfactor micro-dip package – offering a max height of 1.6 mm,and requiring only 35 mm2 of board space.

  • Low Package Profile: 1.60 mm (max)
  • Small Area Requirements: 35 mm2
  • Efficient VF – 0.935 V (Typ) at 1 A – 1.165 V (Typ) at 5 A
  • IF(AV) = 1.0 A
  • IFSM = 30 A
  • Glass Passivated Junctions
  • RoHS Compliant
  • Halogen Free
  • UL Certification: E352360

Характеристики

Бренд

Specifications

https://4donline.ihs.com/images/VipMasterIC/IC/FAIR/FAIRS45620/FAIRS45620-1.pdf?hkey=52A5661711E402568146F3353EA87419

Peak_repetitive_reverse_v

800 V

Peak_average_forward_curr

1 A

Peak_forward_voltage

1.1 V

Peak_reverse_current

10 uA

Peak_non_repetitive_surge

30 A

Reverse_voltage

560 V

Supplier_package

Micro DIP

Product_dimensions

mm

Pin_count

4

Schedule_b

8541100080

Bridge_type

Single Phase

Operating_temperature

-55 to 150 °C

Msl_level

1

Mounting

Through Hole

Htsn

8541100080

Eccn

EAR99

Country_of_origin

China

Конфигурация

Single

Артикул: MDB8S

Описание

With the ever pressing need to improve power supply efficiencyand reliability, the MDBxS family is focused on offeringa best in class small form factor combined with best inclass efficient rectifier performance. The “S” family offers industry leading balance of efficiency,size, and cost. They offer designers improved efficiency byachieving an industry leading VF of 0.935 V Typ. at 1 A 25°C, and a VF of 1.165 V Typ. at 5 A 25 °C. These lower VFvalues offer roughly a 5% efficiency improvement overmeasured competitive same form factor devices. Thislower VF vs. competitive devices results in cooler and moreefficient power supply operation. The design supports a 30 A IFSM rating to absorb highsurge currents and offers rated breakdown voltages up to1000 V. Finally, the MDBxS family achieves all this in a small formfactor micro-dip package – offering a max height of 1.6 mm,and requiring only 35 mm2 of board space.

  • Low Package Profile: 1.60 mm (max)
  • Small Area Requirements: 35 mm2
  • Efficient VF – 0.935 V (Typ) at 1 A – 1.165 V (Typ) at 5 A
  • IF(AV) = 1.0 A
  • IFSM = 30 A
  • Glass Passivated Junctions
  • RoHS Compliant
  • Halogen Free
  • UL Certification: E352360

Детали

Бренд

Specifications

https://4donline.ihs.com/images/VipMasterIC/IC/FAIR/FAIRS45620/FAIRS45620-1.pdf?hkey=52A5661711E402568146F3353EA87419

Peak_repetitive_reverse_v

800 V

Peak_average_forward_curr

1 A

Peak_forward_voltage

1.1 V

Peak_reverse_current

10 uA

Peak_non_repetitive_surge

30 A

Reverse_voltage

560 V

Supplier_package

Micro DIP

Product_dimensions

mm

Pin_count

4

Schedule_b

8541100080

Bridge_type

Single Phase

Operating_temperature

-55 to 150 °C

Msl_level

1

Mounting

Through Hole

Htsn

8541100080

Eccn

EAR99

Country_of_origin

China

Конфигурация

Single