Combo Mem 32Mx16 Flash + 8Mx16 SRAM 1.8V 105-Pin SCSP T/R

The Numonyx Wireless Flash Memory (W18) device with flexible multi-partition dual operation architecture, provides high-performance Asynchronous and Synchronous Burst reads. It is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash memory intrinsic non-volatility, the W18 device eliminates the traditional system-performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster execution memory. It reduces total memory requirement that increases reliability and reduces overall system power consumption and cost. The W18 device’s flexible multi-partition architecture allows program or erase to occur in one partition while reading from another partition. This allows for higher data write throughput compared to single-partition architectures and designers can choose code and data partition sizes. The dual-operation architecture allows two processors to interleave code operations while program and erase operations take place in the background.

• High Performance Read-While-Write/Erase
  • Burst frequency at 66 MHz (zero wait states)
  • 60 ns Initial access read speed
  • 11 ns Burst mode read speed
  • 20 ns Page mode read speed
  • 4-, 8-, 16-, and Continuous-Word Burst mode reads
  • Burst and Page mode reads in all Blocks, across all partition boundaries
  • Burst Suspend feature
  • Enhanced Factory Programming at 3.1 µs/word
• Security
  • 128-Bit OTP Protection Register: 64 unique pre-programmed bits + 64 user-programmable bits
  • Absolute Write Protection with V PP at ground
  • Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
• Quality and Reliability
  • Temperature Range: –40 °C to +85 °C
  • 100K Erase Cycles per Block
  • 90 nm ETOX™ IX Process
  • 130 nm ETOX™ VIII Process
• Architecture
  • Multiple 4-Mbit partitions
  • Dual Operation: RWW or RWE
  • Parameter block size = 4-Kword
  • Main block size = 32-Kword
  • Top or bottom parameter devices
  • 16-bit wide data bus
• Software
  • 5 µs (typ.) Program and Erase Suspend latency time
  • Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
  • Programmable WAIT signal polarity Packaging and Power
  • 90 nm: 32- and 64-Mbit in VF BGA
  • 130 nm: 32-, 64-, and 128-Mbit in VF BGA
  • 130 nm: 128-Mbit in QUAD+ package
  • 56 Active Ball Matrix, 0.75 mm Ball-Pitch
  • V CC = 1.70 V to 1.95 V
  • V CCQ (90 nm) = 1.7 V to 1.95 V
  • V CCQ (130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
  • V CCQ (130 nm) = 1.35 V to 2.24 V
  • Standby current (130 nm): 8 µA (typ.)
  • Read current: 8 mA (4-word burst, typ.)