Описание
The precision, CMOS, monolithic analog switches now feature guaranteed on-resistance matching (3O max) between switches and guaranteed on-resistance flatness over the signal range (4O max). These switches conduct equally well in either direction and guarantee low charge injection, low power consumption, and an ESD tolerance of 2000V minimum per Method 3015.7. The new design offers low off-leakage current over temperature (less than 5nA at +85°C). This part is normally open. Switching times are less than 175ns max for tON and less than 145ns max for tOFF. Operation is from a single +10V to +30V supply, or bipolar ±4.5V to ±20V supplies. They are fabricated with a 44V silicon-gate process.
- Guaranteed RFLAT(ON) Over Signal Range (4O max)
- Improved Charge Injection (10pC max)
- Improved Off-Leakage Current Over Temperature (< 5nA at +85°C)
- Withstand Electrostatic Discharge (2000V min) per Method 3015.7
- Low RDS(ON) (35O max)
- Single-Supply Operation +10V to +30
- Bipolar-Supply Operation ±4.5V to ±20V
- Low Power Consumption (35µW max)
- Rail-to-Rail Signal Handling
- TTL/CMOS-Logic Compatible
