Analog Switch Quad SPST 16-Pin SOIC N T/R, DG612DY-T1-E3, Vishay

Описание

The DG612 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG612 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.The DG611 and DG612 differ only in that they respond to opposite logic levels.

• Fast switching – t_{ON: 12 ns}
• Low charge injection: ± 2 pC
• Wide bandwidth: 500 MHz
• 5 V CMOS logic compatible
• Low R_DS(on): 18 O
• Low quiescent power : 1.2 nW
• Single supply operation