Analog Switch Quad SPST 16-Pin SOIC N, DG613DY, Vishay

The DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.The DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT.

  • Fast switching – tON: 12 ns
  • Low charge injection: ± 2 pC
  • Wide bandwidth: 500 MHz
  • 5 V CMOS logic compatible
  • Low RDS(on): 18 O
  • Low quiescent power : 1.2 nW
  • Single supply operation

Характеристики

Бренд

Operating_temp

-40 to 85 °C

Output_signal_type

Single-Ended

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

10 x 4 x 1.55 mm

Schedule_b

8542390000

Specifications

http://www.vishay.com/docs/70057/dg611.pdf

Number_of_outputs_per_chip

4

Supplier_package

SOIC N

Max_on_resistance_range

45 to 60 Ohm

Operating_supply_current

±0.001@15V

Operating_supply_voltage

±10, ±12 V, ±15, 10, 18

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Конфигурация

Quad SPST

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Single

Kind

Analog Switch

Lead_finish

Tin/Lead

Max_high_lev_output_current

30 mA

Max_low_lev_output_current

30 mA

Max_on_resistance

45@15V@-3V Ohm

Max_power_dissipation

600 mW

Max_processing_temp

240

Max_turn_on_time

35@15V@-3V ns

Mounting

Surface Mount

Number_of_channels_per_chip

4

Артикул: DG613DY

Описание

The DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.The DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT.

  • Fast switching – tON: 12 ns
  • Low charge injection: ± 2 pC
  • Wide bandwidth: 500 MHz
  • 5 V CMOS logic compatible
  • Low RDS(on): 18 O
  • Low quiescent power : 1.2 nW
  • Single supply operation

Детали

Бренд

Operating_temp

-40 to 85 °C

Output_signal_type

Single-Ended

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

10 x 4 x 1.55 mm

Schedule_b

8542390000

Specifications

http://www.vishay.com/docs/70057/dg611.pdf

Number_of_outputs_per_chip

4

Supplier_package

SOIC N

Max_on_resistance_range

45 to 60 Ohm

Operating_supply_current

±0.001@15V

Operating_supply_voltage

±10, ±12 V, ±15, 10, 18

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Конфигурация

Quad SPST

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Single

Kind

Analog Switch

Lead_finish

Tin/Lead

Max_high_lev_output_current

30 mA

Max_low_lev_output_current

30 mA

Max_on_resistance

45@15V@-3V Ohm

Max_power_dissipation

600 mW

Max_processing_temp

240

Max_turn_on_time

35@15V@-3V ns

Mounting

Surface Mount

Number_of_channels_per_chip

4