Analog Switch Quad SPST 16-Pin SOIC N, DG611DY-E3, Vishay

The DG611 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.The DG611 and DG612 differ only in that they respond to opposite logic levels.

  • Fast switching – tON: 12 ns
  • Low charge injection: ± 2 pC
  • Wide bandwidth: 500 MHz
  • 5 V CMOS logic compatible
  • Low RDS(on): 18 O
  • Low quiescent power : 1.2 nW
  • Single supply operation

Характеристики

Бренд

Operating_supply_voltage

±10, ±12 V, ±15, 10, 18

Mounting

Surface Mount

Max_processing_temp

260

Max_low_lev_output_current

30 mA

Lead_finish

Matte Tin

Kind

Analog Switch

Htsn

8542390001

Eccn

EAR99

Country_of_origin

Philippines

Конфигурация

Quad SPST

Number_of_inputs_per_chip

4

Operating_supply_current

±0.001@15V

Operating_temp

-40 to 85 °C

Max_on_resistance_range

45 to 60 Ohm

Number_of_outputs_per_chip

4

Specifications

http://www.vishay.com/docs/70057/dg611.pdf

Schedule_b

8542390000

Product_dimensions

10 x 4 x 1.55 mm

Power_supply_type

Dual, Single

Polarity

Non-Inverting

Pin_count

16

Output_signal_type

Single-Ended

Number_of_channels_per_chip

4

Артикул: DG611DY-E3

Описание

The DG611 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.The DG611 and DG612 differ only in that they respond to opposite logic levels.

  • Fast switching – tON: 12 ns
  • Low charge injection: ± 2 pC
  • Wide bandwidth: 500 MHz
  • 5 V CMOS logic compatible
  • Low RDS(on): 18 O
  • Low quiescent power : 1.2 nW
  • Single supply operation

Детали

Бренд

Operating_supply_voltage

±10, ±12 V, ±15, 10, 18

Mounting

Surface Mount

Max_processing_temp

260

Max_low_lev_output_current

30 mA

Lead_finish

Matte Tin

Kind

Analog Switch

Htsn

8542390001

Eccn

EAR99

Country_of_origin

Philippines

Конфигурация

Quad SPST

Number_of_inputs_per_chip

4

Operating_supply_current

±0.001@15V

Operating_temp

-40 to 85 °C

Max_on_resistance_range

45 to 60 Ohm

Number_of_outputs_per_chip

4

Specifications

http://www.vishay.com/docs/70057/dg611.pdf

Schedule_b

8542390000

Product_dimensions

10 x 4 x 1.55 mm

Power_supply_type

Dual, Single

Polarity

Non-Inverting

Pin_count

16

Output_signal_type

Single-Ended

Number_of_channels_per_chip

4