Analog Switch Dual SPDT 14-Pin SOIC N, DG303BDY-T1, Vishay

The DG303B family of monolithic CMOS switches feature three switch configuration options (SPST, SPDT, and DPST) for precision applications in communications, instrumentation and process control, where low leakage switching combined with low power consumption are required. Designed on the Siliconix PLUS-40 CMOS process, these switches are latch-up proof, and are designed to block up to 30 V peak-to-peak when off. An epitaxial layer prevents latchup. In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance. Featuring low power consumption (3.5 mW typ.) these switches are ideal for battery powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi TTL compatible. Single supply operation is allowed by connecting the V- rail to 0 V.

  • Analog signal range: ± 15 V
  • Fast switching – tON: 150 ns
  • Low on-resistance – RDS(on): 30 ?
  • Single supply operation
  • Latch-up proof
  • CMOS compatible

Характеристики

Бренд

Operating_temp

-40 to 85 °C

Pin_count

14

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

8.75 x 4 x 1.55 mm

Schedule_b

8541290080

Specifications

http://www.vishay.com/docs/71402/71402.pdf

Number_of_outputs_per_chip

4

Supplier_package

SOIC N

Max_on_resistance_range

45 to 60 Ohm

Operating_supply_current

1@15V

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±7, ±9, 13, 36

Number_of_inputs_per_chip

4

Конфигурация

Dual SPDT

Eccn

EAR99

Htsn

8541290095

Kind

Analog Switch

Lead_finish

Tin/Lead

Max_on_resistance

50@±15V Ohm

Max_processing_temp

240

Mounting

Surface Mount

Number_of_channels_per_chip

2

Артикул: DG303BDY-T1

Описание

The DG303B family of monolithic CMOS switches feature three switch configuration options (SPST, SPDT, and DPST) for precision applications in communications, instrumentation and process control, where low leakage switching combined with low power consumption are required. Designed on the Siliconix PLUS-40 CMOS process, these switches are latch-up proof, and are designed to block up to 30 V peak-to-peak when off. An epitaxial layer prevents latchup. In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance. Featuring low power consumption (3.5 mW typ.) these switches are ideal for battery powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi TTL compatible. Single supply operation is allowed by connecting the V- rail to 0 V.

  • Analog signal range: ± 15 V
  • Fast switching – tON: 150 ns
  • Low on-resistance – RDS(on): 30 ?
  • Single supply operation
  • Latch-up proof
  • CMOS compatible

Детали

Бренд

Operating_temp

-40 to 85 °C

Pin_count

14

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

8.75 x 4 x 1.55 mm

Schedule_b

8541290080

Specifications

http://www.vishay.com/docs/71402/71402.pdf

Number_of_outputs_per_chip

4

Supplier_package

SOIC N

Max_on_resistance_range

45 to 60 Ohm

Operating_supply_current

1@15V

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±7, ±9, 13, 36

Number_of_inputs_per_chip

4

Конфигурация

Dual SPDT

Eccn

EAR99

Htsn

8541290095

Kind

Analog Switch

Lead_finish

Tin/Lead

Max_on_resistance

50@±15V Ohm

Max_processing_temp

240

Mounting

Surface Mount

Number_of_channels_per_chip

2