Analog Switch Dual SPDT 14-Pin SOIC N, DG303BDY-T1, Vishay

The DG303B family of monolithic CMOS switches feature three switch configuration options (SPST, SPDT, and DPST) for precision applications in communications, instrumentation and process control, where low leakage switching combined with low power consumption are required. Designed on the Siliconix PLUS-40 CMOS process, these switches are latch-up proof, and are designed to block up to 30 V peak-to-peak when off. An epitaxial layer prevents latchup. In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance. Featuring low power consumption (3.5 mW typ.) these switches are ideal for battery powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi TTL compatible. Single supply operation is allowed by connecting the V- rail to 0 V.

  • Analog signal range: ± 15 V
  • Fast switching – tON: 150 ns
  • Low on-resistance – RDS(on): 30 ?
  • Single supply operation
  • Latch-up proof
  • CMOS compatible

Характеристики

Бренд

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±7, ±9, 13, 36

Mounting

Surface Mount

Max_processing_temp

240

Max_on_resistance

50@±15V Ohm

Lead_finish

Tin/Lead

Kind

Analog Switch

Htsn

8541290095

Eccn

EAR99

Конфигурация

Dual SPDT

Number_of_inputs_per_chip

4

Operating_supply_current

1@15V

Operating_temp

-40 to 85 °C

Max_on_resistance_range

45 to 60 Ohm

Supplier_package

SOIC N

Number_of_outputs_per_chip

4

Specifications

http://www.vishay.com/docs/71402/71402.pdf

Schedule_b

8541290080

Product_dimensions

8.75 x 4 x 1.55 mm

Power_supply_type

Dual, Single

Polarity

Non-Inverting

Pin_count

14

Number_of_channels_per_chip

2

Артикул: DG303BDY-T1

Описание

The DG303B family of monolithic CMOS switches feature three switch configuration options (SPST, SPDT, and DPST) for precision applications in communications, instrumentation and process control, where low leakage switching combined with low power consumption are required. Designed on the Siliconix PLUS-40 CMOS process, these switches are latch-up proof, and are designed to block up to 30 V peak-to-peak when off. An epitaxial layer prevents latchup. In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance. Featuring low power consumption (3.5 mW typ.) these switches are ideal for battery powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi TTL compatible. Single supply operation is allowed by connecting the V- rail to 0 V.

  • Analog signal range: ± 15 V
  • Fast switching – tON: 150 ns
  • Low on-resistance – RDS(on): 30 ?
  • Single supply operation
  • Latch-up proof
  • CMOS compatible

Детали

Бренд

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±7, ±9, 13, 36

Mounting

Surface Mount

Max_processing_temp

240

Max_on_resistance

50@±15V Ohm

Lead_finish

Tin/Lead

Kind

Analog Switch

Htsn

8541290095

Eccn

EAR99

Конфигурация

Dual SPDT

Number_of_inputs_per_chip

4

Operating_supply_current

1@15V

Operating_temp

-40 to 85 °C

Max_on_resistance_range

45 to 60 Ohm

Supplier_package

SOIC N

Number_of_outputs_per_chip

4

Specifications

http://www.vishay.com/docs/71402/71402.pdf

Schedule_b

8541290080

Product_dimensions

8.75 x 4 x 1.55 mm

Power_supply_type

Dual, Single

Polarity

Non-Inverting

Pin_count

14

Number_of_channels_per_chip

2