Analog Switch Dual DPDT 16-Pin QFN EP T/R, NLAS44599MNR2G, ON Semiconductor

The NLAS44599 is an advanced CMOS double pole-double throw (DPDT) analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation.This DPDT controls analog and digital voltages that may vary across the full power-supply range from V to GND.The NLAS44599 can also be used as a quad 2-to-1 multiplexer/demultiplexer analog switch with two Select pins that each controls two multiplexer/demultiplexers.

  • Channel Select Input Over-Voltage Tolerant to 5.5 V
  • Fast Switching and Propagation Speeds
  • Break-Before-Make Circuitry
  • Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
  • Diode Protection Provided on Channel Select Input
  • Improved Linearity and Lower ON Resistance over Input Voltage
  • Latchup Performance Exceeds 300 mA
  • ESD Performance: HBM > 2000 V; MM > 200 V
  • Chip Complexity: 158 FETs

Характеристики

Бренд

Operating_temp

-55 to 125 °C

Output_signal_type

Differential

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Single

Product_dimensions

3 x 3 x 0.87 mm

Schedule_b

8542390000

Specifications

https://4donline.ihs.com/images/VipMasterIC/IC/ONSM/ONSMS15073/ONSMS15073-1.pdf?hkey=52A5661711E402568146F3353EA87419

Number_of_outputs_per_chip

8

Supplier_package

QFN EP

Max_on_resistance_range

80 to 100 Ohm

Operating_supply_voltage

2 V, 5.5

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Конфигурация

Dual DPDT

Country_of_origin

United States

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Differential

Kind

Analog Switch

Lead_finish

Matte Tin

Max_high_lev_output_current

50 mA

Max_low_lev_output_current

50 mA

Max_on_resistance

85@2.5V Ohm

Max_power_dissipation

800 mW

Max_processing_temp

260

Max_turn_on_time

35@2.5V ns

Mounting

Surface Mount

Msl_level

1

Number_of_channels_per_chip

2

Артикул: NLAS44599MNR2G

Описание

The NLAS44599 is an advanced CMOS double pole-double throw (DPDT) analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation.This DPDT controls analog and digital voltages that may vary across the full power-supply range from V to GND.The NLAS44599 can also be used as a quad 2-to-1 multiplexer/demultiplexer analog switch with two Select pins that each controls two multiplexer/demultiplexers.

  • Channel Select Input Over-Voltage Tolerant to 5.5 V
  • Fast Switching and Propagation Speeds
  • Break-Before-Make Circuitry
  • Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
  • Diode Protection Provided on Channel Select Input
  • Improved Linearity and Lower ON Resistance over Input Voltage
  • Latchup Performance Exceeds 300 mA
  • ESD Performance: HBM > 2000 V; MM > 200 V
  • Chip Complexity: 158 FETs

Детали

Бренд

Operating_temp

-55 to 125 °C

Output_signal_type

Differential

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Single

Product_dimensions

3 x 3 x 0.87 mm

Schedule_b

8542390000

Specifications

https://4donline.ihs.com/images/VipMasterIC/IC/ONSM/ONSMS15073/ONSMS15073-1.pdf?hkey=52A5661711E402568146F3353EA87419

Number_of_outputs_per_chip

8

Supplier_package

QFN EP

Max_on_resistance_range

80 to 100 Ohm

Operating_supply_voltage

2 V, 5.5

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Конфигурация

Dual DPDT

Country_of_origin

United States

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Differential

Kind

Analog Switch

Lead_finish

Matte Tin

Max_high_lev_output_current

50 mA

Max_low_lev_output_current

50 mA

Max_on_resistance

85@2.5V Ohm

Max_power_dissipation

800 mW

Max_processing_temp

260

Max_turn_on_time

35@2.5V ns

Mounting

Surface Mount

Msl_level

1

Number_of_channels_per_chip

2