Trans IGBT Chip N-CH 650V 60A 3-Pin D2PAK T/R
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Caractéristiques
| Brand | STMicroelectronics |
|---|---|
| Maximum C | 650 V |
| Maximum G | ?20 V |
| Configuration | Single |
| Product description | 10.4(Max) x 4.6(Max) x 9.35(Max) |
| Channel Type | N |
| Maximum C | 60 A |
| Supplier | D2PAK |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Operating temperature | -55 to 175 °C |
SKU: STGB30M65DF2