B2B товарно-сырьевая площадка

NOR Flash Serial-SPI 3V/3.3V 1Gbit 1G x 1bit 16-Pin SOIC Tray

NOR Flash Serial-SPI 3V/3.3V 1Gbit 1G x 1bit 16-Pin SOIC Tray
  • Serial Peripheral Interface (SPI)
    • SPI Clock polarity and phase modes 0 and 3
    • Double Data Rate (DDR) option
    • Extended Addressing: 32-bit address
    • Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
    • Multi I/O Command set and footprint compatible with S25FL-P SPI family
  • READ Commands
    • Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR
    • AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address
    • Common Flash Interface (CFI) data for configuration information
  • Programming (1.5 Mbytes/s)
    • 512-byte Page Programming buffer
    • Quad-Input Page Programming (QPP) for slow clock systems
  • Erase (0.5 Mbytes/s)
    • Uniform 256-kbyte sectors
  • Cycling Endurance
    • 100,000 Program-Erase Cycles on any sector typical
  • Data Retention
    • 20 Year Data Retention typical Security Features
  • One Time Program (OTP) array of 1024 bytes
  • Block Protection
    • Status Register bits to control protection against program or erase of a contiguous range of sectors.
    • Hardware and software control options
    • Advanced Sector Protection (ASP)
    • Individual sector protection controlled by boot code or password
  • Spansion 65 nm MirrorBit Technology with Eclipse™ Architecture
  • Core Supply Voltage: 2.7V to 3.6V
  • I/O Supply Voltage: 1.65V to 3.6V
  • Temperature Range:
    • Industrial (-40°C to +85°C)
    • Automotive In-Cabin (-40°C to +105°C)
  • Packages (all Pb-free)
    • 16-lead SOIC (300 mils)
    • BGA-24, 8 x 6 mm
    • 5 x 5 ball (FAB024) footprint

Especificaciones

Brand Rochester Electronics
Ecc Support No
Simultane No
Lead Finish Tin
Screening Level Automotive
Program Current 100 mA
Boot Block Yes
Block Org Symmetrical
Erase Sus Yes
Interface Type Serial (SPI)
Programmi 2.7, 3.6 V
Density 1 Gbit
Msl Level 3
Maximum R 6.5 ns
Maximum O 36 mA
Architecture Sectored
Typical O 3, 3.3 V
Product description 10.3 x 7.5 x 2.55(Max)
Timing Type Synchronous
Operating temperature -40 to 105 °C
Address B 32 Bit
Schedule B 8542320050
HTSN 8542320051
Country of origin United States
Number Of Words 1 Gwords
Number Of 1 Bit
Minimum O 2.7 V
Supplier SOIC
Max Proce 260
Maximum O 3.6 V
Cell Type NOR
SKU: S70FL01GSAGMFV010