Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Designed for soft commutation only Maximum junction temperature: TJ= 175 °C Tail-less switching off VCE(sat)= 1.8 V (typ.) @ IC= 40 A Tight parameters distribution Safe paralleling Low thermal resistance Low VFsoft recovery co-packaged diode
Spezifikationen
| Brand | STMicroelectronics |
|---|---|
| Maximum C | 600 V |
| Maximum G | ?20 V |
| Configuration | Single |
| Lead Finish | Tin |
| Product description | 15.75(Max) x 5.15(Max) x 20.15(Max) |
| Channel Type | N |
| Maximum C | 80 A |
| Supplier | TO-247 |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Operating temperature | -55 to 175 °C |
| Country of origin | China |
SKU: STGW40V60DLF